Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature

• Main Authors: Liu, X, Ang, K.-W, Yu, W, He, J, Feng, X, Liu, Q, Jiang, H, Tang, D, Wen, J, Lu, Y, Liu, W, Cao, P, Han, S, Wu, J, Wang, X, Zhu, D, He, Z
• Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
• Format: Article
• Published: 2020
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/174015
• Institution: National University of Singapore

10.1038/srep24920