Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature

Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature

10.1038/srep24920

Saved in:
Bibliographic Details
Main Authors: Liu, X, Ang, K.-W, Yu, W, He, J, Feng, X, Liu, Q, Jiang, H, Tang, D, Wen, J, Lu, Y, Liu, W, Cao, P, Han, S, Wu, J, Wang, X, Zhu, D, He, Z
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: 2020
Online Access:https://scholarbank.nus.edu.sg/handle/10635/174015
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
id sg-nus-scholar.10635-174015
record_format dspace
spelling sg-nus-scholar.10635-1740152024-04-17T03:20:19Z Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature Liu, X Ang, K.-W Yu, W He, J Feng, X Liu, Q Jiang, H Tang, D Wen, J Lu, Y Liu, W Cao, P Han, S Wu, J Wang, X Zhu, D He, Z ELECTRICAL AND COMPUTER ENGINEERING 10.1038/srep24920 Scientific Reports 6 24920 2020-09-02T06:56:29Z 2020-09-02T06:56:29Z 2016 Article Liu, X, Ang, K.-W, Yu, W, He, J, Feng, X, Liu, Q, Jiang, H, Tang, D, Wen, J, Lu, Y, Liu, W, Cao, P, Han, S, Wu, J, Wang, X, Zhu, D, He, Z (2016). Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature. Scientific Reports 6 : 24920. ScholarBank@NUS Repository. https://doi.org/10.1038/srep24920 20452322 https://scholarbank.nus.edu.sg/handle/10635/174015 Unpaywall 20200831
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1038/srep24920
author2 ELECTRICAL AND COMPUTER ENGINEERING
author_facet ELECTRICAL AND COMPUTER ENGINEERING
Liu, X
Ang, K.-W
Yu, W
He, J
Feng, X
Liu, Q
Jiang, H
Tang, D
Wen, J
Lu, Y
Liu, W
Cao, P
Han, S
Wu, J
Wang, X
Zhu, D
He, Z
format Article
author Liu, X
Ang, K.-W
Yu, W
He, J
Feng, X
Liu, Q
Jiang, H
Tang, D
Wen, J
Lu, Y
Liu, W
Cao, P
Han, S
Wu, J
Wang, X
Zhu, D
He, Z
spellingShingle Liu, X
Ang, K.-W
Yu, W
He, J
Feng, X
Liu, Q
Jiang, H
Tang, D
Wen, J
Lu, Y
Liu, W
Cao, P
Han, S
Wu, J
Wang, X
Zhu, D
He, Z
Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature
author_sort Liu, X
title Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature
title_short Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature
title_full Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature
title_fullStr Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature
title_full_unstemmed Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature
title_sort black phosphorus based field effect transistors with simultaneously achieved near ideal subthreshold swing and high hole mobility at room temperature
publishDate 2020
url https://scholarbank.nus.edu.sg/handle/10635/174015
_version_ 1800914209058324480

Similar Items