Computational study of shape, orientation and dimensional effects on the performance of nanowire fets
Master's
Saved in:
Main Author: | KOONG CHEE SHIN |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2010
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/17711 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Language: | English |
Similar Items
-
Investigation of Thickness and Orientation Effects on the III-V DG-UTB FET: A Simulation Approach
by: GUO YAN
Published: (2013) -
Vertical Si-Nanowire n-type tunneling FETs with low subthreshold swing ≤50 mV/decade) at room temperature
by: Gandhi, R., et al.
Published: (2014) -
Top-down engineered silicon and germanium nanowire MOSFET
by: PENG JIANWEI
Published: (2011) -
Effects of cross-sectional shape and temperature on mechanical behavior of platinum nanowires
by: Koh, S.J.A., et al.
Published: (2014) -
Theoretical investigations of thermoelectric effects in advanced low dimensional materials
by: HUANG WEN
Published: (2014)