Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration

Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration

10.1038/s41598-017-15025-0

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Main Authors: Holland, M, Van Dal, M, Duriez, B, Oxland, R, Vellianitis, G, Doornbos, G, Afzalian, A, Chen, T.-K, Hsieh, C.-H, Ramvall, P, Vasen, T, Yeo, Y.-C, Passlack, M
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: 2020
Online Access:https://scholarbank.nus.edu.sg/handle/10635/178298
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-1782982024-04-16T12:14:33Z Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration Holland, M Van Dal, M Duriez, B Oxland, R Vellianitis, G Doornbos, G Afzalian, A Chen, T.-K Hsieh, C.-H Ramvall, P Vasen, T Yeo, Y.-C Passlack, M ELECTRICAL AND COMPUTER ENGINEERING 10.1038/s41598-017-15025-0 Scientific Reports 7 1 14632 2020-10-20T09:06:20Z 2020-10-20T09:06:20Z 2017 Article Holland, M, Van Dal, M, Duriez, B, Oxland, R, Vellianitis, G, Doornbos, G, Afzalian, A, Chen, T.-K, Hsieh, C.-H, Ramvall, P, Vasen, T, Yeo, Y.-C, Passlack, M (2017). Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration. Scientific Reports 7 (1) : 14632. ScholarBank@NUS Repository. https://doi.org/10.1038/s41598-017-15025-0 20452322 https://scholarbank.nus.edu.sg/handle/10635/178298 Attribution 4.0 International http://creativecommons.org/licenses/by/4.0/ Unpaywall 20201031
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1038/s41598-017-15025-0
author2 ELECTRICAL AND COMPUTER ENGINEERING
author_facet ELECTRICAL AND COMPUTER ENGINEERING
Holland, M
Van Dal, M
Duriez, B
Oxland, R
Vellianitis, G
Doornbos, G
Afzalian, A
Chen, T.-K
Hsieh, C.-H
Ramvall, P
Vasen, T
Yeo, Y.-C
Passlack, M
format Article
author Holland, M
Van Dal, M
Duriez, B
Oxland, R
Vellianitis, G
Doornbos, G
Afzalian, A
Chen, T.-K
Hsieh, C.-H
Ramvall, P
Vasen, T
Yeo, Y.-C
Passlack, M
spellingShingle Holland, M
Van Dal, M
Duriez, B
Oxland, R
Vellianitis, G
Doornbos, G
Afzalian, A
Chen, T.-K
Hsieh, C.-H
Ramvall, P
Vasen, T
Yeo, Y.-C
Passlack, M
Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration
author_sort Holland, M
title Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration
title_short Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration
title_full Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration
title_fullStr Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration
title_full_unstemmed Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration
title_sort atomically flat and uniform relaxed iii-v epitaxial films on silicon substrate for heterogeneous and hybrid integration
publishDate 2020
url https://scholarbank.nus.edu.sg/handle/10635/178298
_version_ 1800914488862441472

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