Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3

Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3

10.1039/c6ra27281a

Saved in:

Bibliographic Details
Main Authors:	Lu, W, Iwasa, Y, Ou, Y, Jinno, D, Kamiyama, S, Petersen, P.M, Ou, H
Other Authors:	MECHANICAL ENGINEERING
Format:	Article
Published:	2020
Subjects:	Aluminum Aluminum coatings Annealing Anodic oxidation Atomic layer deposition Oxide films Passivation Silicon carbide Thin films X ray photoelectron spectroscopy Aluminum oxides Annealing temperatures Atomic layer deposited Luminescence efficiencies Passivation effect PL intensity Surface passivation Time-resolved Porous silicon
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/178741
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Description
Summary:	10.1039/c6ra27281a