Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3

10.1039/c6ra27281a

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Bibliographic Details
Main Authors:	Lu, W, Iwasa, Y, Ou, Y, Jinno, D, Kamiyama, S, Petersen, P.M, Ou, H
Other Authors:	MECHANICAL ENGINEERING
Format:	Article
Published:	2020
Subjects:	Aluminum Aluminum coatings Annealing Anodic oxidation Atomic layer deposition Oxide films Passivation Silicon carbide Thin films X ray photoelectron spectroscopy Aluminum oxides Annealing temperatures Atomic layer deposited Luminescence efficiencies Passivation effect PL intensity Surface passivation Time-resolved Porous silicon
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/178741
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-178741
record_format	dspace
spelling	sg-nus-scholar.10635-1787412024-11-10T19:30:10Z Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3 Lu, W Iwasa, Y Ou, Y Jinno, D Kamiyama, S Petersen, P.M Ou, H MECHANICAL ENGINEERING Aluminum Aluminum coatings Annealing Anodic oxidation Atomic layer deposition Oxide films Passivation Silicon carbide Thin films X ray photoelectron spectroscopy Aluminum oxides Annealing temperatures Atomic layer deposited Luminescence efficiencies Passivation effect PL intensity Surface passivation Time-resolved Porous silicon 10.1039/c6ra27281a RSC Advances 7 14 8090-8097 2020-10-21T08:12:25Z 2020-10-21T08:12:25Z 2017 Article Lu, W, Iwasa, Y, Ou, Y, Jinno, D, Kamiyama, S, Petersen, P.M, Ou, H (2017). Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3. RSC Advances 7 (14) : 8090-8097. ScholarBank@NUS Repository. https://doi.org/10.1039/c6ra27281a 20462069 https://scholarbank.nus.edu.sg/handle/10635/178741 Attribution 4.0 International http://creativecommons.org/licenses/by/4.0/ Unpaywall 20201031
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Aluminum Aluminum coatings Annealing Anodic oxidation Atomic layer deposition Oxide films Passivation Silicon carbide Thin films X ray photoelectron spectroscopy Aluminum oxides Annealing temperatures Atomic layer deposited Luminescence efficiencies Passivation effect PL intensity Surface passivation Time-resolved Porous silicon
spellingShingle	Aluminum Aluminum coatings Annealing Anodic oxidation Atomic layer deposition Oxide films Passivation Silicon carbide Thin films X ray photoelectron spectroscopy Aluminum oxides Annealing temperatures Atomic layer deposited Luminescence efficiencies Passivation effect PL intensity Surface passivation Time-resolved Porous silicon Lu, W Iwasa, Y Ou, Y Jinno, D Kamiyama, S Petersen, P.M Ou, H Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3
description	10.1039/c6ra27281a
author2	MECHANICAL ENGINEERING
author_facet	MECHANICAL ENGINEERING Lu, W Iwasa, Y Ou, Y Jinno, D Kamiyama, S Petersen, P.M Ou, H
format	Article
author	Lu, W Iwasa, Y Ou, Y Jinno, D Kamiyama, S Petersen, P.M Ou, H
author_sort	Lu, W
title	Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3
title_short	Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3
title_full	Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3
title_fullStr	Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3
title_full_unstemmed	Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3
title_sort	effective optimization of surface passivation on porous silicon carbide using atomic layer deposited al2o3
publishDate	2020
url	https://scholarbank.nus.edu.sg/handle/10635/178741
_version_	1821204603933294592

Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3

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