Application of novel gate materials for performance improvement in flash memory devices
Ph.D
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2010
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sg-nus-scholar.10635-180002017-10-21T08:33:56Z Application of novel gate materials for performance improvement in flash memory devices PU JING ELECTRICAL & COMPUTER ENGINEERING CHAN SIU HUNG, DANIEL Flash Memory; SONOS; Retention; Gadolium Oxide; Ph.D DOCTOR OF PHILOSOPHY 2010-09-03T18:00:49Z 2010-09-03T18:00:49Z 2009-11-20 Thesis PU JING (2009-11-20). Application of novel gate materials for performance improvement in flash memory devices. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/18000 NOT_IN_WOS en |
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National University of Singapore |
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NUS Library |
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Singapore |
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ScholarBank@NUS |
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English |
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Flash Memory; SONOS; Retention; Gadolium Oxide; |
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Flash Memory; SONOS; Retention; Gadolium Oxide; PU JING Application of novel gate materials for performance improvement in flash memory devices |
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Ph.D |
author2 |
ELECTRICAL & COMPUTER ENGINEERING |
author_facet |
ELECTRICAL & COMPUTER ENGINEERING PU JING |
format |
Theses and Dissertations |
author |
PU JING |
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PU JING |
title |
Application of novel gate materials for performance improvement in flash memory devices |
title_short |
Application of novel gate materials for performance improvement in flash memory devices |
title_full |
Application of novel gate materials for performance improvement in flash memory devices |
title_fullStr |
Application of novel gate materials for performance improvement in flash memory devices |
title_full_unstemmed |
Application of novel gate materials for performance improvement in flash memory devices |
title_sort |
application of novel gate materials for performance improvement in flash memory devices |
publishDate |
2010 |
url |
http://scholarbank.nus.edu.sg/handle/10635/18000 |
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1681079533691731968 |