Development and characterization of high-k dielectric/germanium gate stack
Ph.D
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sg-nus-scholar.10635-182192015-01-13T05:38:31Z Development and characterization of high-k dielectric/germanium gate stack XIE RUILONG ELECTRICAL & COMPUTER ENGINEERING ZHU CHUNXIANG LI MING-FU YU MINGBIN semiconductor, germanium, MOS, transistor, high-k, passivation, Ph.D DOCTOR OF PHILOSOPHY 2010-09-30T18:00:31Z 2010-09-30T18:00:31Z 2009-12-07 Thesis XIE RUILONG (2009-12-07). Development and characterization of high-k dielectric/germanium gate stack. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/18219 NOT_IN_WOS en |
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National University of Singapore |
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Singapore |
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ScholarBank@NUS |
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English |
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semiconductor, germanium, MOS, transistor, high-k, passivation, |
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semiconductor, germanium, MOS, transistor, high-k, passivation, XIE RUILONG Development and characterization of high-k dielectric/germanium gate stack |
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Ph.D |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING XIE RUILONG |
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Theses and Dissertations |
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XIE RUILONG |
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XIE RUILONG |
title |
Development and characterization of high-k dielectric/germanium gate stack |
title_short |
Development and characterization of high-k dielectric/germanium gate stack |
title_full |
Development and characterization of high-k dielectric/germanium gate stack |
title_fullStr |
Development and characterization of high-k dielectric/germanium gate stack |
title_full_unstemmed |
Development and characterization of high-k dielectric/germanium gate stack |
title_sort |
development and characterization of high-k dielectric/germanium gate stack |
publishDate |
2010 |
url |
http://scholarbank.nus.edu.sg/handle/10635/18219 |
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