Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: Understanding the role of shadowing and sputtering

Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: Understanding the role of shadowing and sputtering

10.1186/1556-276X-8-289

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Bibliographic Details
Main Authors:	Basu, T, Datta, D.P, Som, T
Other Authors:	CENTRE FOR ADVANCED 2D MATERIALS
Format:	Article
Published:	2020
Subjects:	Argon Atomic force microscopy Coarsening Ion beams Ostwald ripening Silicon Sputtering Surface roughness Topography Angles of incidence Faceted structures Ion beam patterning Mechanism-based Parallel mode Shadowing effects Sputtering yields Temporal evolution Ion bombardment
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/183217
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Institution:	National University of Singapore

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Summary:	10.1186/1556-276X-8-289