Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: Understanding the role of shadowing and sputtering

10.1186/1556-276X-8-289

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Main Authors: Basu, T, Datta, D.P, Som, T
Other Authors: CENTRE FOR ADVANCED 2D MATERIALS
Format: Article
Published: 2020
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Online Access:https://scholarbank.nus.edu.sg/handle/10635/183217
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spelling sg-nus-scholar.10635-1832172023-09-20T21:49:26Z Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: Understanding the role of shadowing and sputtering Basu, T Datta, D.P Som, T CENTRE FOR ADVANCED 2D MATERIALS Argon Atomic force microscopy Coarsening Ion beams Ostwald ripening Silicon Sputtering Surface roughness Topography Angles of incidence Faceted structures Ion beam patterning Mechanism-based Parallel mode Shadowing effects Sputtering yields Temporal evolution Ion bombardment 10.1186/1556-276X-8-289 Nanoscale Research Letters 8 1 1-8 2020-11-10T00:33:42Z 2020-11-10T00:33:42Z 2013 Article Basu, T, Datta, D.P, Som, T (2013). Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: Understanding the role of shadowing and sputtering. Nanoscale Research Letters 8 (1) : 1-8. ScholarBank@NUS Repository. https://doi.org/10.1186/1556-276X-8-289 19317573 https://scholarbank.nus.edu.sg/handle/10635/183217 Attribution 4.0 International http://creativecommons.org/licenses/by/4.0/ Unpaywall 20201031
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Argon
Atomic force microscopy
Coarsening
Ion beams
Ostwald ripening
Silicon
Sputtering
Surface roughness
Topography
Angles of incidence
Faceted structures
Ion beam patterning
Mechanism-based
Parallel mode
Shadowing effects
Sputtering yields
Temporal evolution
Ion bombardment
spellingShingle Argon
Atomic force microscopy
Coarsening
Ion beams
Ostwald ripening
Silicon
Sputtering
Surface roughness
Topography
Angles of incidence
Faceted structures
Ion beam patterning
Mechanism-based
Parallel mode
Shadowing effects
Sputtering yields
Temporal evolution
Ion bombardment
Basu, T
Datta, D.P
Som, T
Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: Understanding the role of shadowing and sputtering
description 10.1186/1556-276X-8-289
author2 CENTRE FOR ADVANCED 2D MATERIALS
author_facet CENTRE FOR ADVANCED 2D MATERIALS
Basu, T
Datta, D.P
Som, T
format Article
author Basu, T
Datta, D.P
Som, T
author_sort Basu, T
title Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: Understanding the role of shadowing and sputtering
title_short Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: Understanding the role of shadowing and sputtering
title_full Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: Understanding the role of shadowing and sputtering
title_fullStr Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: Understanding the role of shadowing and sputtering
title_full_unstemmed Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: Understanding the role of shadowing and sputtering
title_sort transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: understanding the role of shadowing and sputtering
publishDate 2020
url https://scholarbank.nus.edu.sg/handle/10635/183217
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