A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation
10.1109/TED.2019.2931069
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
IEEE
2020
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| Online Access: | https://scholarbank.nus.edu.sg/handle/10635/184400 |
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| Institution: | National University of Singapore |