A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation

A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation

10.1109/TED.2019.2931069

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Bibliographic Details
Main Authors: Wang, L., Ang, K.-W., Thean, A.V.-Y., Liang, G.
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: IEEE 2020
Online Access:https://scholarbank.nus.edu.sg/handle/10635/184400
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Institution: National University of Singapore
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Summary:10.1109/TED.2019.2931069

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