A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation

10.1109/TED.2019.2931069

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Main Authors: Wang, L., Ang, K.-W., Thean, A.V.-Y., Liang, G.
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: IEEE 2020
Online Access:https://scholarbank.nus.edu.sg/handle/10635/184400
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-1844002024-04-16T11:13:25Z A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation Wang, L. Wang, L. Ang, K.-W. Thean, A.V.-Y. Liang, G. ELECTRICAL AND COMPUTER ENGINEERING 10.1109/TED.2019.2931069 IEEE Transactions on Electron Devices 66 9 4092 2020-12-02T01:57:40Z 2020-12-02T01:57:40Z 2019/08/08 Article Wang, L., Wang, L., Ang, K.-W., Thean, A.V.-Y., Liang, G. (2019/08/08). A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation. IEEE Transactions on Electron Devices 66 (9) : 4092. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2019.2931069 15579646 https://scholarbank.nus.edu.sg/handle/10635/184400 IEEE
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1109/TED.2019.2931069
author2 ELECTRICAL AND COMPUTER ENGINEERING
author_facet ELECTRICAL AND COMPUTER ENGINEERING
Wang, L.
Wang, L.
Ang, K.-W.
Thean, A.V.-Y.
Liang, G.
format Article
author Wang, L.
Wang, L.
Ang, K.-W.
Thean, A.V.-Y.
Liang, G.
spellingShingle Wang, L.
Wang, L.
Ang, K.-W.
Thean, A.V.-Y.
Liang, G.
A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation
author_sort Wang, L.
title A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation
title_short A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation
title_full A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation
title_fullStr A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation
title_full_unstemmed A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation
title_sort compact model for 2-d poly-mos2 fets with resistive switching in postsynaptic simulation
publisher IEEE
publishDate 2020
url https://scholarbank.nus.edu.sg/handle/10635/184400
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