A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation
10.1109/TED.2019.2931069
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sg-nus-scholar.10635-1844002024-04-16T11:13:25Z A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation Wang, L. Wang, L. Ang, K.-W. Thean, A.V.-Y. Liang, G. ELECTRICAL AND COMPUTER ENGINEERING 10.1109/TED.2019.2931069 IEEE Transactions on Electron Devices 66 9 4092 2020-12-02T01:57:40Z 2020-12-02T01:57:40Z 2019/08/08 Article Wang, L., Wang, L., Ang, K.-W., Thean, A.V.-Y., Liang, G. (2019/08/08). A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation. IEEE Transactions on Electron Devices 66 (9) : 4092. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2019.2931069 15579646 https://scholarbank.nus.edu.sg/handle/10635/184400 IEEE |
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10.1109/TED.2019.2931069 |
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ELECTRICAL AND COMPUTER ENGINEERING |
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ELECTRICAL AND COMPUTER ENGINEERING Wang, L. Wang, L. Ang, K.-W. Thean, A.V.-Y. Liang, G. |
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Article |
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Wang, L. Wang, L. Ang, K.-W. Thean, A.V.-Y. Liang, G. |
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Wang, L. Wang, L. Ang, K.-W. Thean, A.V.-Y. Liang, G. A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation |
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Wang, L. |
title |
A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation |
title_short |
A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation |
title_full |
A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation |
title_fullStr |
A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation |
title_full_unstemmed |
A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation |
title_sort |
compact model for 2-d poly-mos2 fets with resistive switching in postsynaptic simulation |
publisher |
IEEE |
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2020 |
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https://scholarbank.nus.edu.sg/handle/10635/184400 |
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1800914446924644352 |