Flexible Quasi-van der Waals Ferroelectric Hafnium-Based Oxide for Integrated High-Performance Nonvolatile Memory

10.1002/advs.202001266

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Bibliographic Details
Main Authors:	Liu, H., Lu, T., Li, Y., Ju, Z., Zhao, R., Li, J., Shao, M., Zhang, H., Liang, R., Wang, X.R., Guo, R., Chen, J., Yang, Y., Ren, T.-L.
Other Authors:	MATERIALS SCIENCE AND ENGINEERING
Format:	Article
Published:	John Wiley and Sons Inc 2021
Subjects:	ferroelectric materials flexible electronics nonvolatile memory quasi-van der Waals heteroepitaxy thin film transistors
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/197462
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-197462
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spelling	sg-nus-scholar.10635-1974622024-04-25T01:02:24Z Flexible Quasi-van der Waals Ferroelectric Hafnium-Based Oxide for Integrated High-Performance Nonvolatile Memory Liu, H. Lu, T. Li, Y. Ju, Z. Zhao, R. Li, J. Shao, M. Zhang, H. Liang, R. Wang, X.R. Guo, R. Chen, J. Yang, Y. Ren, T.-L. MATERIALS SCIENCE AND ENGINEERING ferroelectric materials flexible electronics nonvolatile memory quasi-van der Waals heteroepitaxy thin film transistors 10.1002/advs.202001266 Advanced Science 7 19 2001266 2021-08-18T02:50:44Z 2021-08-18T02:50:44Z 2020 Article Liu, H., Lu, T., Li, Y., Ju, Z., Zhao, R., Li, J., Shao, M., Zhang, H., Liang, R., Wang, X.R., Guo, R., Chen, J., Yang, Y., Ren, T.-L. (2020). Flexible Quasi-van der Waals Ferroelectric Hafnium-Based Oxide for Integrated High-Performance Nonvolatile Memory. Advanced Science 7 (19) : 2001266. ScholarBank@NUS Repository. https://doi.org/10.1002/advs.202001266 21983844 https://scholarbank.nus.edu.sg/handle/10635/197462 Attribution 4.0 International http://creativecommons.org/licenses/by/4.0/ John Wiley and Sons Inc Scopus OA2020
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	ferroelectric materials flexible electronics nonvolatile memory quasi-van der Waals heteroepitaxy thin film transistors
spellingShingle	ferroelectric materials flexible electronics nonvolatile memory quasi-van der Waals heteroepitaxy thin film transistors Liu, H. Lu, T. Li, Y. Ju, Z. Zhao, R. Li, J. Shao, M. Zhang, H. Liang, R. Wang, X.R. Guo, R. Chen, J. Yang, Y. Ren, T.-L. Flexible Quasi-van der Waals Ferroelectric Hafnium-Based Oxide for Integrated High-Performance Nonvolatile Memory
description	10.1002/advs.202001266
author2	MATERIALS SCIENCE AND ENGINEERING
author_facet	MATERIALS SCIENCE AND ENGINEERING Liu, H. Lu, T. Li, Y. Ju, Z. Zhao, R. Li, J. Shao, M. Zhang, H. Liang, R. Wang, X.R. Guo, R. Chen, J. Yang, Y. Ren, T.-L.
format	Article
author	Liu, H. Lu, T. Li, Y. Ju, Z. Zhao, R. Li, J. Shao, M. Zhang, H. Liang, R. Wang, X.R. Guo, R. Chen, J. Yang, Y. Ren, T.-L.
author_sort	Liu, H.
title	Flexible Quasi-van der Waals Ferroelectric Hafnium-Based Oxide for Integrated High-Performance Nonvolatile Memory
title_short	Flexible Quasi-van der Waals Ferroelectric Hafnium-Based Oxide for Integrated High-Performance Nonvolatile Memory
title_full	Flexible Quasi-van der Waals Ferroelectric Hafnium-Based Oxide for Integrated High-Performance Nonvolatile Memory
title_fullStr	Flexible Quasi-van der Waals Ferroelectric Hafnium-Based Oxide for Integrated High-Performance Nonvolatile Memory
title_full_unstemmed	Flexible Quasi-van der Waals Ferroelectric Hafnium-Based Oxide for Integrated High-Performance Nonvolatile Memory
title_sort	flexible quasi-van der waals ferroelectric hafnium-based oxide for integrated high-performance nonvolatile memory
publisher	John Wiley and Sons Inc
publishDate	2021
url	https://scholarbank.nus.edu.sg/handle/10635/197462
_version_	1800914908717514752

Flexible Quasi-van der Waals Ferroelectric Hafnium-Based Oxide for Integrated High-Performance Nonvolatile Memory

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