Flexible Quasi-van der Waals Ferroelectric Hafnium-Based Oxide for Integrated High-Performance Nonvolatile Memory

• Main Authors: Liu, H., Lu, T., Li, Y., Ju, Z., Zhao, R., Li, J., Shao, M., Zhang, H., Liang, R., Wang, X.R., Guo, R., Chen, J., Yang, Y., Ren, T.-L.
• Other Authors: MATERIALS SCIENCE AND ENGINEERING
• Format: Article
• Published: John Wiley and Sons Inc 2021
• Subjects: ferroelectric materials; flexible electronics; nonvolatile memory; quasi-van der Waals heteroepitaxy; thin film transistors
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/197462
• Institution: National University of Singapore

10.1002/advs.202001266