Flexible Quasi-van der Waals Ferroelectric Hafnium-Based Oxide for Integrated High-Performance Nonvolatile Memory

Flexible Quasi-van der Waals Ferroelectric Hafnium-Based Oxide for Integrated High-Performance Nonvolatile Memory

10.1002/advs.202001266

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Bibliographic Details
Main Authors: Liu, H., Lu, T., Li, Y., Ju, Z., Zhao, R., Li, J., Shao, M., Zhang, H., Liang, R., Wang, X.R., Guo, R., Chen, J., Yang, Y., Ren, T.-L.
Other Authors: MATERIALS SCIENCE AND ENGINEERING
Format: Article
Published: John Wiley and Sons Inc 2021
Subjects:
ferroelectric materials
flexible electronics
nonvolatile memory
quasi-van der Waals heteroepitaxy
thin film transistors
Online Access:https://scholarbank.nus.edu.sg/handle/10635/197462
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Institution: National University of Singapore
Description
Summary:10.1002/advs.202001266

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