THEORETICAL AND EXPERIMENTAL STUDY OF PEROVSKITE AND III-V SEMICONDUCTORS
Ph.D
Saved in:
Main Author: | WANG TIAN |
---|---|
Other Authors: | CHEMISTRY |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2021
|
Subjects: | |
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/199995 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Language: | English |
Similar Items
-
Metalorganic chemical vapor deposition-regrown Ga-rich InGaP films on SiGe virtual substrates for Si-based III-V optoelectronic device applications
by: Kim, TaeWan, et al.
Published: (2017) -
Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors
by: Lao, Y. F., et al.
Published: (2017) -
High mobility III-V compound semiconductors for advanced transistor applications
by: CHIN HOCK CHUN
Published: (2011) -
Halogen-containing semiconductors : from artificial photosynthesis to unconventional computing
by: Klejna, Sylwia, et al.
Published: (2020) -
INORGANIC HALIDE PEROVSKITE/ORGANIC SEMICONDUCTOR-BASED MATERIALS FOR FIELD-EFFECT TRANSISTOR-RELATED APPLICATIONS
by: WANG CONGYONG
Published: (2023)