Nickel Silicide Interface Engineering for Contact Resistance Reduction in Nanoscale CMOS Technology

Ph.D

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Bibliographic Details
Main Author:	WONG HOONG SHING
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Theses and Dissertations
Language:	English
Published:	2011
Subjects:	NiSi, Interface, contact resistance, CMOS, Selenium, Antimony
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/21000
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-21000
record_format	dspace
spelling	sg-nus-scholar.10635-210002024-10-26T02:10:18Z Nickel Silicide Interface Engineering for Contact Resistance Reduction in Nanoscale CMOS Technology WONG HOONG SHING ELECTRICAL & COMPUTER ENGINEERING YEO YEE CHIA SAMUDRA, GANESH S PATRICK LO GUO QIANG NiSi, Interface, contact resistance, CMOS, Selenium, Antimony Ph.D DOCTOR OF PHILOSOPHY 2011-03-31T18:01:48Z 2011-03-31T18:01:48Z 2009-12-21 Thesis WONG HOONG SHING (2009-12-21). Nickel Silicide Interface Engineering for Contact Resistance Reduction in Nanoscale CMOS Technology. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/21000 NOT_IN_WOS en
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
language	English
topic	NiSi, Interface, contact resistance, CMOS, Selenium, Antimony
spellingShingle	NiSi, Interface, contact resistance, CMOS, Selenium, Antimony WONG HOONG SHING Nickel Silicide Interface Engineering for Contact Resistance Reduction in Nanoscale CMOS Technology
description	Ph.D
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING WONG HOONG SHING
format	Theses and Dissertations
author	WONG HOONG SHING
author_sort	WONG HOONG SHING
title	Nickel Silicide Interface Engineering for Contact Resistance Reduction in Nanoscale CMOS Technology
title_short	Nickel Silicide Interface Engineering for Contact Resistance Reduction in Nanoscale CMOS Technology
title_full	Nickel Silicide Interface Engineering for Contact Resistance Reduction in Nanoscale CMOS Technology
title_fullStr	Nickel Silicide Interface Engineering for Contact Resistance Reduction in Nanoscale CMOS Technology
title_full_unstemmed	Nickel Silicide Interface Engineering for Contact Resistance Reduction in Nanoscale CMOS Technology
title_sort	nickel silicide interface engineering for contact resistance reduction in nanoscale cmos technology
publishDate	2011
url	http://scholarbank.nus.edu.sg/handle/10635/21000
_version_	1821185847487102976

Nickel Silicide Interface Engineering for Contact Resistance Reduction in Nanoscale CMOS Technology

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