Bottom-electrode induced defects in self-assembled monolayer (SAM)-based tunnel junctions affect only the SAM resistance, not the contact resistance or SAM capacitance
10.1039/c8ra01513a
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Royal Society of Chemistry
2021
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sg-nus-scholar.10635-2108892024-04-17T06:16:09Z Bottom-electrode induced defects in self-assembled monolayer (SAM)-based tunnel junctions affect only the SAM resistance, not the contact resistance or SAM capacitance Sangeeth, C.S.S. Jiang, L. Nijhuis, C.A. CHEMISTRY 10.1039/c8ra01513a RSC Advances 8 36 19939-19949 2021-12-16T07:56:39Z 2021-12-16T07:56:39Z 2018 Article Sangeeth, C.S.S., Jiang, L., Nijhuis, C.A. (2018). Bottom-electrode induced defects in self-assembled monolayer (SAM)-based tunnel junctions affect only the SAM resistance, not the contact resistance or SAM capacitance. RSC Advances 8 (36) : 19939-19949. ScholarBank@NUS Repository. https://doi.org/10.1039/c8ra01513a 20462069 https://scholarbank.nus.edu.sg/handle/10635/210889 Attribution-NonCommercial 4.0 International https://creativecommons.org/licenses/by-nc/4.0/ Royal Society of Chemistry Scopus OA2018 |
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National University of Singapore |
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Asia |
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Singapore Singapore |
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| description |
10.1039/c8ra01513a |
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CHEMISTRY |
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CHEMISTRY Sangeeth, C.S.S. Jiang, L. Nijhuis, C.A. |
| format |
Article |
| author |
Sangeeth, C.S.S. Jiang, L. Nijhuis, C.A. |
| spellingShingle |
Sangeeth, C.S.S. Jiang, L. Nijhuis, C.A. Bottom-electrode induced defects in self-assembled monolayer (SAM)-based tunnel junctions affect only the SAM resistance, not the contact resistance or SAM capacitance |
| author_sort |
Sangeeth, C.S.S. |
| title |
Bottom-electrode induced defects in self-assembled monolayer (SAM)-based tunnel junctions affect only the SAM resistance, not the contact resistance or SAM capacitance |
| title_short |
Bottom-electrode induced defects in self-assembled monolayer (SAM)-based tunnel junctions affect only the SAM resistance, not the contact resistance or SAM capacitance |
| title_full |
Bottom-electrode induced defects in self-assembled monolayer (SAM)-based tunnel junctions affect only the SAM resistance, not the contact resistance or SAM capacitance |
| title_fullStr |
Bottom-electrode induced defects in self-assembled monolayer (SAM)-based tunnel junctions affect only the SAM resistance, not the contact resistance or SAM capacitance |
| title_full_unstemmed |
Bottom-electrode induced defects in self-assembled monolayer (SAM)-based tunnel junctions affect only the SAM resistance, not the contact resistance or SAM capacitance |
| title_sort |
bottom-electrode induced defects in self-assembled monolayer (sam)-based tunnel junctions affect only the sam resistance, not the contact resistance or sam capacitance |
| publisher |
Royal Society of Chemistry |
| publishDate |
2021 |
| url |
https://scholarbank.nus.edu.sg/handle/10635/210889 |
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1800915237710331904 |