Bottom-electrode induced defects in self-assembled monolayer (SAM)-based tunnel junctions affect only the SAM resistance, not the contact resistance or SAM capacitance
10.1039/c8ra01513a
Saved in:
Main Authors: | Sangeeth, C.S.S., Jiang, L., Nijhuis, C.A. |
---|---|
Other Authors: | CHEMISTRY |
Format: | Article |
Published: |
Royal Society of Chemistry
2021
|
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/210889 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Comparison of SAM-based junctions with Ga 2O 3/EGaIn top electrodes to other large-area tunneling junctions
by: Nijhuis, C.A., et al.
Published: (2014) -
The SAM, not the electrodes, dominates charge transport in metal-monolayer//Ga 2O 3/gallium-indium eutectic junctions
by: Reus, W.F., et al.
Published: (2014) -
Trịnh Sâm
by: Nguyễn, Văn Tố
Published: (2021) -
Lá thư sám hối
by: Nguyễn, Đức Sinh
Published: (2017) -
Trịnh Sâm (bài nối)
by: Nguyễn, Văn Tố
Published: (2021)