Impact of Trap Profile on the Characteristics of 2-D MoS<sub>2</sub> Memtransistors: A Simulation Study

10.1109/TED.2022.3186867

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Bibliographic Details
Main Authors:	Zhang, Panpan, Feng, Xuewei, Fong, Xuanyao
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Language:	English
Published:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2023
Subjects:	Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Physics, Applied Engineering Physics Memtransistor molybdenum disulfide (MoS2) Schottky barrier (SB) technology computer-aided design (TCAD) trap CONTACT RESISTANCE METAL TRANSITION
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/245754
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Institution:	National University of Singapore
Language:	English

Description
Summary:	10.1109/TED.2022.3186867