Impact of Trap Profile on the Characteristics of 2-D MoS<sub>2</sub> Memtransistors: A Simulation Study
10.1109/TED.2022.3186867
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IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
2023
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sg-nus-scholar.10635-2457542024-04-16T11:53:27Z Impact of Trap Profile on the Characteristics of 2-D MoS<sub>2</sub> Memtransistors: A Simulation Study Zhang, Panpan Feng, Xuewei Fong, Xuanyao ELECTRICAL AND COMPUTER ENGINEERING Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Physics, Applied Engineering Physics Memtransistor molybdenum disulfide (MoS2) Schottky barrier (SB) technology computer-aided design (TCAD) trap CONTACT RESISTANCE METAL TRANSITION 10.1109/TED.2022.3186867 IEEE TRANSACTIONS ON ELECTRON DEVICES 69 8 4750-4756 2023-11-06T07:14:23Z 2023-11-06T07:14:23Z 2022-08 2023-11-05T08:55:34Z Article Zhang, Panpan, Feng, Xuewei, Fong, Xuanyao (2022-08). Impact of Trap Profile on the Characteristics of 2-D MoS<sub>2</sub> Memtransistors: A Simulation Study. IEEE TRANSACTIONS ON ELECTRON DEVICES 69 (8) : 4750-4756. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2022.3186867 0018-9383 1557-9646 https://scholarbank.nus.edu.sg/handle/10635/245754 en IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Elements |
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National University of Singapore |
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Singapore Singapore |
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English |
| topic |
Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Physics, Applied Engineering Physics Memtransistor molybdenum disulfide (MoS2) Schottky barrier (SB) technology computer-aided design (TCAD) trap CONTACT RESISTANCE METAL TRANSITION |
| spellingShingle |
Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Physics, Applied Engineering Physics Memtransistor molybdenum disulfide (MoS2) Schottky barrier (SB) technology computer-aided design (TCAD) trap CONTACT RESISTANCE METAL TRANSITION Zhang, Panpan Feng, Xuewei Fong, Xuanyao Impact of Trap Profile on the Characteristics of 2-D MoS<sub>2</sub> Memtransistors: A Simulation Study |
| description |
10.1109/TED.2022.3186867 |
| author2 |
ELECTRICAL AND COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL AND COMPUTER ENGINEERING Zhang, Panpan Feng, Xuewei Fong, Xuanyao |
| format |
Article |
| author |
Zhang, Panpan Feng, Xuewei Fong, Xuanyao |
| author_sort |
Zhang, Panpan |
| title |
Impact of Trap Profile on the Characteristics of 2-D MoS<sub>2</sub> Memtransistors: A Simulation Study |
| title_short |
Impact of Trap Profile on the Characteristics of 2-D MoS<sub>2</sub> Memtransistors: A Simulation Study |
| title_full |
Impact of Trap Profile on the Characteristics of 2-D MoS<sub>2</sub> Memtransistors: A Simulation Study |
| title_fullStr |
Impact of Trap Profile on the Characteristics of 2-D MoS<sub>2</sub> Memtransistors: A Simulation Study |
| title_full_unstemmed |
Impact of Trap Profile on the Characteristics of 2-D MoS<sub>2</sub> Memtransistors: A Simulation Study |
| title_sort |
impact of trap profile on the characteristics of 2-d mos<sub>2</sub> memtransistors: a simulation study |
| publisher |
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| publishDate |
2023 |
| url |
https://scholarbank.nus.edu.sg/handle/10635/245754 |
| _version_ |
1800915966451777536 |