A Fokker-Planck Approach for Modeling the Stochastic Phenomena in Magnetic and Resistive Random Access Memory Devices

A Fokker-Planck Approach for Modeling the Stochastic Phenomena in Magnetic and Resistive Random Access Memory Devices

10.1109/TED.2021.3123067

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Bibliographic Details
Main Authors:	Das, Debasis, Fong, Xuanyao
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Language:	English
Published:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2023
Subjects:	Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Physics, Applied Engineering Physics Magnetic tunneling Mathematical models Stochastic processes Perpendicular magnetic anisotropy Magnetization Torque Magnetic devices Fokker > Planck (FP) equation magnetic random access memory (MRAM) magnetic tunnel junction (MTJ) resistive random access memory (RRAM) spin-transfer torque devices
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/245789
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Institution:	National University of Singapore
Language:	English

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Summary:	10.1109/TED.2021.3123067