A Fokker-Planck Approach for Modeling the Stochastic Phenomena in Magnetic and Resistive Random Access Memory Devices

• Main Authors: Das, Debasis, Fong, Xuanyao
• Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
• Format: Article
• Language: English
• Published: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2023
• Subjects: Science & Technology; Technology; Physical Sciences; Engineering, Electrical & Electronic; Physics, Applied; Engineering; Physics; Magnetic tunneling; Mathematical models; Stochastic processes; Perpendicular magnetic anisotropy; Magnetization; Torque; Magnetic devices; Fokker > Planck (FP) equation; magnetic random access memory (MRAM); magnetic tunnel junction (MTJ); resistive random access memory (RRAM); spin-transfer torque devices
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/245789
• Institution: National University of Singapore

10.1109/TED.2021.3123067