A Fokker-Planck Approach for Modeling the Stochastic Phenomena in Magnetic and Resistive Random Access Memory Devices

10.1109/TED.2021.3123067

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Main Authors:	Das, Debasis, Fong, Xuanyao
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Language:	English
Published:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2023
Subjects:	Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Physics, Applied Engineering Physics Magnetic tunneling Mathematical models Stochastic processes Perpendicular magnetic anisotropy Magnetization Torque Magnetic devices Fokker > Planck (FP) equation magnetic random access memory (MRAM) magnetic tunnel junction (MTJ) resistive random access memory (RRAM) spin-transfer torque devices
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/245789
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Institution:	National University of Singapore
Language:	English

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spelling	sg-nus-scholar.10635-2457892024-04-16T11:53:29Z A Fokker-Planck Approach for Modeling the Stochastic Phenomena in Magnetic and Resistive Random Access Memory Devices Das, Debasis Fong, Xuanyao ELECTRICAL AND COMPUTER ENGINEERING Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Physics, Applied Engineering Physics Magnetic tunneling Mathematical models Stochastic processes Perpendicular magnetic anisotropy Magnetization Torque Magnetic devices Fokker--Planck (FP) equation magnetic random access memory (MRAM) magnetic tunnel junction (MTJ) resistive random access memory (RRAM) spin-transfer torque devices 10.1109/TED.2021.3123067 IEEE TRANSACTIONS ON ELECTRON DEVICES 68 12 6124-6131 2023-11-08T01:07:57Z 2023-11-08T01:07:57Z 2021-12 2023-11-05T09:07:17Z Article Das, Debasis, Fong, Xuanyao (2021-12). A Fokker-Planck Approach for Modeling the Stochastic Phenomena in Magnetic and Resistive Random Access Memory Devices. IEEE TRANSACTIONS ON ELECTRON DEVICES 68 (12) : 6124-6131. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2021.3123067 0018-9383 1557-9646 https://scholarbank.nus.edu.sg/handle/10635/245789 en IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Elements
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
language	English
topic	Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Physics, Applied Engineering Physics Magnetic tunneling Mathematical models Stochastic processes Perpendicular magnetic anisotropy Magnetization Torque Magnetic devices Fokker--Planck (FP) equation magnetic random access memory (MRAM) magnetic tunnel junction (MTJ) resistive random access memory (RRAM) spin-transfer torque devices
spellingShingle	Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Physics, Applied Engineering Physics Magnetic tunneling Mathematical models Stochastic processes Perpendicular magnetic anisotropy Magnetization Torque Magnetic devices Fokker--Planck (FP) equation magnetic random access memory (MRAM) magnetic tunnel junction (MTJ) resistive random access memory (RRAM) spin-transfer torque devices Das, Debasis Fong, Xuanyao A Fokker-Planck Approach for Modeling the Stochastic Phenomena in Magnetic and Resistive Random Access Memory Devices
description	10.1109/TED.2021.3123067
author2	ELECTRICAL AND COMPUTER ENGINEERING
author_facet	ELECTRICAL AND COMPUTER ENGINEERING Das, Debasis Fong, Xuanyao
format	Article
author	Das, Debasis Fong, Xuanyao
author_sort	Das, Debasis
title	A Fokker-Planck Approach for Modeling the Stochastic Phenomena in Magnetic and Resistive Random Access Memory Devices
title_short	A Fokker-Planck Approach for Modeling the Stochastic Phenomena in Magnetic and Resistive Random Access Memory Devices
title_full	A Fokker-Planck Approach for Modeling the Stochastic Phenomena in Magnetic and Resistive Random Access Memory Devices
title_fullStr	A Fokker-Planck Approach for Modeling the Stochastic Phenomena in Magnetic and Resistive Random Access Memory Devices
title_full_unstemmed	A Fokker-Planck Approach for Modeling the Stochastic Phenomena in Magnetic and Resistive Random Access Memory Devices
title_sort	fokker-planck approach for modeling the stochastic phenomena in magnetic and resistive random access memory devices
publisher	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
publishDate	2023
url	https://scholarbank.nus.edu.sg/handle/10635/245789
_version_	1800915970683830272

A Fokker-Planck Approach for Modeling the Stochastic Phenomena in Magnetic and Resistive Random Access Memory Devices

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