Recent Advances in In-Memory Computing: Exploring Memristor and Memtransistor Arrays with 2D Materials
10.1007/s40820-024-01335-2
Saved in:
Main Authors: | Hongbo Zhou, Sifan Li, Kah Wee Ang, Yong-wei Zhang |
---|---|
其他作者: | ELECTRICAL AND COMPUTER ENGINEERING |
格式: | Article |
語言: | English |
出版: |
2024
|
在線閱讀: | https://scholarbank.nus.edu.sg/handle/10635/248326 |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
相似書籍
-
Self-selective multi-terminal memtransistor crossbar array for in-memory computing
由: Xuewei Feng, et al.
出版: (2023) -
In-memory computing using memristor arrays with ultrathin 2D PdSeOx/PdSe2 heterostructure
由: Yesheng Li, et al.
出版: (2023) -
Nonvolatile logic‐in‐memory computing based on solution‐processed CuI memristor
由: Bochang Li, et al.
出版: (2023) -
Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing
由: Sifan Li, Bochang Li, et al.
出版: (2022) -
Ferroelectric Memory Based on Two-dimensional Materials for Neuromorphic Computing
由: Li Chen, et al.
出版: (2023)