Top-down engineered silicon and germanium nanowire MOSFET

Ph.D

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Bibliographic Details
Main Author:	PENG JIANWEI
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Theses and Dissertations
Language:	English
Published:	2011
Subjects:	Silicon, Germanium, Nanowire, MOSFET, Top-Down, Core/Shell
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/25831
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-25831
record_format	dspace
spelling	sg-nus-scholar.10635-258312017-10-21T08:39:55Z Top-down engineered silicon and germanium nanowire MOSFET PENG JIANWEI ELECTRICAL & COMPUTER ENGINEERING LEE SUNGJOO PATRICK LO GUO QIANG Silicon, Germanium, Nanowire, MOSFET, Top-Down, Core/Shell Ph.D DOCTOR OF PHILOSOPHY 2011-08-31T18:01:08Z 2011-08-31T18:01:08Z 2010-08-19 Thesis PENG JIANWEI (2010-08-19). Top-down engineered silicon and germanium nanowire MOSFET. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/25831 NOT_IN_WOS en
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
language	English
topic	Silicon, Germanium, Nanowire, MOSFET, Top-Down, Core/Shell
spellingShingle	Silicon, Germanium, Nanowire, MOSFET, Top-Down, Core/Shell PENG JIANWEI Top-down engineered silicon and germanium nanowire MOSFET
description	Ph.D
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING PENG JIANWEI
format	Theses and Dissertations
author	PENG JIANWEI
author_sort	PENG JIANWEI
title	Top-down engineered silicon and germanium nanowire MOSFET
title_short	Top-down engineered silicon and germanium nanowire MOSFET
title_full	Top-down engineered silicon and germanium nanowire MOSFET
title_fullStr	Top-down engineered silicon and germanium nanowire MOSFET
title_full_unstemmed	Top-down engineered silicon and germanium nanowire MOSFET
title_sort	top-down engineered silicon and germanium nanowire mosfet
publishDate	2011
url	http://scholarbank.nus.edu.sg/handle/10635/25831
_version_	1681080371615105024

Top-down engineered silicon and germanium nanowire MOSFET

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