Method to fabricate a large planar area ONO interpoly dielectric in flash device
US6051467
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2012
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sg-nus-scholar.10635-325742015-07-29T07:03:41Z Method to fabricate a large planar area ONO interpoly dielectric in flash device CHAN, LAP CHA, CHER LIANG ELECTRICAL ENGINEERING CHARTERED SEMICONDUCTOR MANUFACTURING, LTD. () NATIONAL UNIVERSITY OF SINGAPORE US6051467 Granted Patent 2012-05-02T02:27:14Z 2012-05-02T02:27:14Z 2000-04-18 Patent CHAN, LAP,CHA, CHER LIANG (2000-04-18). Method to fabricate a large planar area ONO interpoly dielectric in flash device. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/32574 NOT_IN_WOS PatSnap |
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US6051467 |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING CHAN, LAP CHA, CHER LIANG |
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CHAN, LAP CHA, CHER LIANG |
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CHAN, LAP CHA, CHER LIANG Method to fabricate a large planar area ONO interpoly dielectric in flash device |
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CHAN, LAP |
title |
Method to fabricate a large planar area ONO interpoly dielectric in flash device |
title_short |
Method to fabricate a large planar area ONO interpoly dielectric in flash device |
title_full |
Method to fabricate a large planar area ONO interpoly dielectric in flash device |
title_fullStr |
Method to fabricate a large planar area ONO interpoly dielectric in flash device |
title_full_unstemmed |
Method to fabricate a large planar area ONO interpoly dielectric in flash device |
title_sort |
method to fabricate a large planar area ono interpoly dielectric in flash device |
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2012 |
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http://scholarbank.nus.edu.sg/handle/10635/32574 |
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1681081248310624256 |