Method to enhance global planarization of silicon oxide surface for IC device fabrication
US6221560
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| Main Authors: | , |
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| Other Authors: | |
| Format: | Patent |
| Published: |
2012
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/32589 |
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| Institution: | National University of Singapore |
| Summary: | US6221560 |
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