Method to enhance global planarization of silicon oxide surface for IC device fabrication
US6221560
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sg-nus-scholar.10635-325892015-07-29T07:03:42Z Method to enhance global planarization of silicon oxide surface for IC device fabrication SOO, CHOI PHENG CHAN, LAP MATERIALS SCIENCE CHARTERED SEMICONDUCTOR MANUFACTURING LTD. (SINGAPORE, SG) NATIONAL UNIVERSITY OF SINGAPORE US6221560 Granted Patent 2012-05-02T02:27:27Z 2012-05-02T02:27:27Z 2001-04-24 Patent SOO, CHOI PHENG,CHAN, LAP (2001-04-24). Method to enhance global planarization of silicon oxide surface for IC device fabrication. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/32589 NOT_IN_WOS PatSnap |
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US6221560 |
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MATERIALS SCIENCE |
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MATERIALS SCIENCE SOO, CHOI PHENG CHAN, LAP |
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SOO, CHOI PHENG CHAN, LAP |
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SOO, CHOI PHENG CHAN, LAP Method to enhance global planarization of silicon oxide surface for IC device fabrication |
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SOO, CHOI PHENG |
title |
Method to enhance global planarization of silicon oxide surface for IC device fabrication |
title_short |
Method to enhance global planarization of silicon oxide surface for IC device fabrication |
title_full |
Method to enhance global planarization of silicon oxide surface for IC device fabrication |
title_fullStr |
Method to enhance global planarization of silicon oxide surface for IC device fabrication |
title_full_unstemmed |
Method to enhance global planarization of silicon oxide surface for IC device fabrication |
title_sort |
method to enhance global planarization of silicon oxide surface for ic device fabrication |
publishDate |
2012 |
url |
http://scholarbank.nus.edu.sg/handle/10635/32589 |
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