Method to enhance global planarization of silicon oxide surface for IC device fabrication

US6221560

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Main Authors: SOO, CHOI PHENG, CHAN, LAP
Other Authors: MATERIALS SCIENCE
Format: Patent
Published: 2012
Online Access:http://scholarbank.nus.edu.sg/handle/10635/32589
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-325892015-07-29T07:03:42Z Method to enhance global planarization of silicon oxide surface for IC device fabrication SOO, CHOI PHENG CHAN, LAP MATERIALS SCIENCE CHARTERED SEMICONDUCTOR MANUFACTURING LTD. (SINGAPORE, SG) NATIONAL UNIVERSITY OF SINGAPORE US6221560 Granted Patent 2012-05-02T02:27:27Z 2012-05-02T02:27:27Z 2001-04-24 Patent SOO, CHOI PHENG,CHAN, LAP (2001-04-24). Method to enhance global planarization of silicon oxide surface for IC device fabrication. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/32589 NOT_IN_WOS PatSnap
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description US6221560
author2 MATERIALS SCIENCE
author_facet MATERIALS SCIENCE
SOO, CHOI PHENG
CHAN, LAP
format Patent
author SOO, CHOI PHENG
CHAN, LAP
spellingShingle SOO, CHOI PHENG
CHAN, LAP
Method to enhance global planarization of silicon oxide surface for IC device fabrication
author_sort SOO, CHOI PHENG
title Method to enhance global planarization of silicon oxide surface for IC device fabrication
title_short Method to enhance global planarization of silicon oxide surface for IC device fabrication
title_full Method to enhance global planarization of silicon oxide surface for IC device fabrication
title_fullStr Method to enhance global planarization of silicon oxide surface for IC device fabrication
title_full_unstemmed Method to enhance global planarization of silicon oxide surface for IC device fabrication
title_sort method to enhance global planarization of silicon oxide surface for ic device fabrication
publishDate 2012
url http://scholarbank.nus.edu.sg/handle/10635/32589
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