Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
US6861271
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Patent |
| Published: |
2012
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/32694 |
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| Institution: | National University of Singapore |
| Summary: | US6861271 |
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