Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)

US6861271

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Bibliographic Details
Main Authors: CHUA, SOO JIN, LI, PENG, HAO, MAOSHENG, ZHANG, JI
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Patent
Published: 2012
Online Access:http://scholarbank.nus.edu.sg/handle/10635/32694
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Institution: National University of Singapore

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