Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)

Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)

US6861271

Saved in:
Bibliographic Details
Main Authors: CHUA, SOO JIN, LI, PENG, HAO, MAOSHENG, ZHANG, JI
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Patent
Published: 2012
Online Access:http://scholarbank.nus.edu.sg/handle/10635/32694
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
id sg-nus-scholar.10635-32694
record_format dspace
spelling sg-nus-scholar.10635-326942015-07-29T07:03:52Z Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD) CHUA, SOO JIN LI, PENG HAO, MAOSHENG ZHANG, JI ELECTRICAL & COMPUTER ENGINEERING COMPUTER SCIENCE THE NATIONAL UNIVERSITY OF SINGAPORE (SINGAPORE, SG) INSTITUTE OF MATERIALS RESEARCH & ENGINEERING US6861271 Granted Patent 2012-05-02T02:28:59Z 2012-05-02T02:28:59Z 2005-03-01 Patent CHUA, SOO JIN,LI, PENG,HAO, MAOSHENG,ZHANG, JI (2005-03-01). Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD). ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/32694 NOT_IN_WOS PatSnap
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description US6861271
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
CHUA, SOO JIN
LI, PENG
HAO, MAOSHENG
ZHANG, JI
format Patent
author CHUA, SOO JIN
LI, PENG
HAO, MAOSHENG
ZHANG, JI
spellingShingle CHUA, SOO JIN
LI, PENG
HAO, MAOSHENG
ZHANG, JI
Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
author_sort CHUA, SOO JIN
title Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
title_short Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
title_full Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
title_fullStr Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
title_full_unstemmed Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
title_sort forming indium nitride (inn) and indium gallium nitride (ingan) quantum dots grown by metal-organic-vapor-phase-epitaxy (mocvd)
publishDate 2012
url http://scholarbank.nus.edu.sg/handle/10635/32694
_version_ 1681081269934358528

Similar Items