Method of fabricating a CMOS device with dual metal gate electrodes

Method of fabricating a CMOS device with dual metal gate electrodes

US7316950

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Bibliographic Details
Main Authors: PARK, CHANG SEO, CHO, BYUNG JIN, BALASUBRAMANIAN, NARAYANAN T.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Patent
Published: 2012
Online Access:http://scholarbank.nus.edu.sg/handle/10635/32753
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/32753

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