RESISTIVE SWITCHING IN TIO2 FOR MEMORY APPLICATIONS

Ph.D

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Bibliographic Details
Main Author:	DU YUANMIN
Other Authors:	PHYSICS
Format:	Theses and Dissertations
Language:	English
Published:	2013
Subjects:	resistive switching, TiO2, RRAM, switching mechanism, charge injection and release, the integrated model
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/43383
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-43383
record_format	dspace
spelling	sg-nus-scholar.10635-433832015-09-23T20:02:46Z RESISTIVE SWITCHING IN TIO2 FOR MEMORY APPLICATIONS DU YUANMIN PHYSICS WEE THYE SHEN, ANDREW WANG SHIJIE PAN HUI PAN HUI resistive switching, TiO2, RRAM, switching mechanism, charge injection and release, the integrated model Ph.D DOCTOR OF PHILOSOPHY 2013-07-29T18:00:06Z 2013-07-29T18:00:06Z 2013-02-15 Thesis DU YUANMIN (2013-02-15). RESISTIVE SWITCHING IN TIO2 FOR MEMORY APPLICATIONS. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/43383 NOT_IN_WOS en
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
language	English
topic	resistive switching, TiO2, RRAM, switching mechanism, charge injection and release, the integrated model
spellingShingle	resistive switching, TiO2, RRAM, switching mechanism, charge injection and release, the integrated model DU YUANMIN RESISTIVE SWITCHING IN TIO2 FOR MEMORY APPLICATIONS
description	Ph.D
author2	PHYSICS
author_facet	PHYSICS DU YUANMIN
format	Theses and Dissertations
author	DU YUANMIN
author_sort	DU YUANMIN
title	RESISTIVE SWITCHING IN TIO2 FOR MEMORY APPLICATIONS
title_short	RESISTIVE SWITCHING IN TIO2 FOR MEMORY APPLICATIONS
title_full	RESISTIVE SWITCHING IN TIO2 FOR MEMORY APPLICATIONS
title_fullStr	RESISTIVE SWITCHING IN TIO2 FOR MEMORY APPLICATIONS
title_full_unstemmed	RESISTIVE SWITCHING IN TIO2 FOR MEMORY APPLICATIONS
title_sort	resistive switching in tio2 for memory applications
publishDate	2013
url	http://scholarbank.nus.edu.sg/handle/10635/43383
_version_	1681082771064225792

RESISTIVE SWITCHING IN TIO2 FOR MEMORY APPLICATIONS

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