RESISTIVE SWITCHING IN TIO2 FOR MEMORY APPLICATIONS

Ph.D

Saved in:

Bibliographic Details
Main Author:	DU YUANMIN
Other Authors:	PHYSICS
Format:	Theses and Dissertations
Language:	English
Published:	2013
Subjects:	resistive switching, TiO2, RRAM, switching mechanism, charge injection and release, the integrated model
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/43383
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore
Language:	English

Be the first to leave a comment!

Similar Items