Investigation of Thickness and Orientation Effects on the III-V DG-UTB FET: A Simulation Approach

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Bibliographic Details
Main Author:	GUO YAN
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Theses and Dissertations
Language:	English
Published:	2013
Subjects:	Semiconductor Simulation, III-V, DG-UTB, Ballistic Transport, Thickness and Orientation Effect
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/48361
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-48361
record_format	dspace
spelling	sg-nus-scholar.10635-483612015-01-10T09:53:18Z Investigation of Thickness and Orientation Effects on the III-V DG-UTB FET: A Simulation Approach GUO YAN ELECTRICAL & COMPUTER ENGINEERING LIANG GENGCHIAU Semiconductor Simulation, III-V, DG-UTB, Ballistic Transport, Thickness and Orientation Effect Master's MASTER OF ENGINEERING 2013-11-30T18:20:56Z 2013-11-30T18:20:56Z 2013-07-23 Thesis GUO YAN (2013-07-23). Investigation of Thickness and Orientation Effects on the III-V DG-UTB FET: A Simulation Approach. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/48361 NOT_IN_WOS en
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
language	English
topic	Semiconductor Simulation, III-V, DG-UTB, Ballistic Transport, Thickness and Orientation Effect
spellingShingle	Semiconductor Simulation, III-V, DG-UTB, Ballistic Transport, Thickness and Orientation Effect GUO YAN Investigation of Thickness and Orientation Effects on the III-V DG-UTB FET: A Simulation Approach
description	Master's
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING GUO YAN
format	Theses and Dissertations
author	GUO YAN
author_sort	GUO YAN
title	Investigation of Thickness and Orientation Effects on the III-V DG-UTB FET: A Simulation Approach
title_short	Investigation of Thickness and Orientation Effects on the III-V DG-UTB FET: A Simulation Approach
title_full	Investigation of Thickness and Orientation Effects on the III-V DG-UTB FET: A Simulation Approach
title_fullStr	Investigation of Thickness and Orientation Effects on the III-V DG-UTB FET: A Simulation Approach
title_full_unstemmed	Investigation of Thickness and Orientation Effects on the III-V DG-UTB FET: A Simulation Approach
title_sort	investigation of thickness and orientation effects on the iii-v dg-utb fet: a simulation approach
publishDate	2013
url	http://scholarbank.nus.edu.sg/handle/10635/48361
_version_	1681083485543989248

Investigation of Thickness and Orientation Effects on the III-V DG-UTB FET: A Simulation Approach

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