Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers

Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers

10.1117/12.756401

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Bibliographic Details
Main Authors: Lin, F., Xiang, N., Chen, P., Chua, S.J., Irshad, A., Roither, S., Pugzlys, A., Baltuska, A.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Absorption
InGaN/GaN quantum well
Metal organic chemical vapor deposition
Recovery time
Saturable absorber
Online Access:http://scholarbank.nus.edu.sg/handle/10635/51135
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Institution: National University of Singapore
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Summary:10.1117/12.756401

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