Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers

10.1117/12.756401

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Bibliographic Details
Main Authors:	Lin, F., Xiang, N., Chen, P., Chua, S.J., Irshad, A., Roither, S., Pugzlys, A., Baltuska, A.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Subjects:	Absorption InGaN/GaN quantum well Metal organic chemical vapor deposition Recovery time Saturable absorber
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/51135
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-51135
record_format	dspace
spelling	sg-nus-scholar.10635-511352023-10-30T08:59:39Z Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers Lin, F. Xiang, N. Chen, P. Chua, S.J. Irshad, A. Roither, S. Pugzlys, A. Baltuska, A. ELECTRICAL & COMPUTER ENGINEERING SOLAR ENERGY RESEARCH INST OF S'PORE Absorption InGaN/GaN quantum well Metal organic chemical vapor deposition Recovery time Saturable absorber 10.1117/12.756401 Proceedings of SPIE - The International Society for Optical Engineering 6824 - PSISD 2014-04-24T08:34:16Z 2014-04-24T08:34:16Z 2008 Conference Paper Lin, F., Xiang, N., Chen, P., Chua, S.J., Irshad, A., Roither, S., Pugzlys, A., Baltuska, A. (2008). Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers. Proceedings of SPIE - The International Society for Optical Engineering 6824 : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.756401 9780819469991 0277786X http://scholarbank.nus.edu.sg/handle/10635/51135 000253881500019 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Absorption InGaN/GaN quantum well Metal organic chemical vapor deposition Recovery time Saturable absorber
spellingShingle	Absorption InGaN/GaN quantum well Metal organic chemical vapor deposition Recovery time Saturable absorber Lin, F. Xiang, N. Chen, P. Chua, S.J. Irshad, A. Roither, S. Pugzlys, A. Baltuska, A. Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers
description	10.1117/12.756401
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Lin, F. Xiang, N. Chen, P. Chua, S.J. Irshad, A. Roither, S. Pugzlys, A. Baltuska, A.
format	Conference or Workshop Item
author	Lin, F. Xiang, N. Chen, P. Chua, S.J. Irshad, A. Roither, S. Pugzlys, A. Baltuska, A.
author_sort	Lin, F.
title	Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers
title_short	Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers
title_full	Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers
title_fullStr	Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers
title_full_unstemmed	Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers
title_sort	demonstration and control of the fast-absorption recovery times of the ingan/gan quantum well saturable absorbers
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/51135
_version_	1781411659612422144

Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers

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