A new insight into the degradation behavior of the LDD N-MOSFET during dynamic hot-carrier stressing

10.1109/55.962661

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Bibliographic Details
Main Author: Ang, D.S.
Other Authors: BACHELOR OF TECHNOLOGY PROGRAMME
Format: Article
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/54518
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Institution: National University of Singapore
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