Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contact

Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contact

10.1063/1.1923162

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Bibliographic Details
Main Authors: Chi, D.Z., Lee, R.T.P., Chua, S.J., Lee, S.J., Ashok, S., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55488
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Institution: National University of Singapore
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Summary:10.1063/1.1923162

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