Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contact

10.1063/1.1923162

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Bibliographic Details
Main Authors:	Chi, D.Z., Lee, R.T.P., Chua, S.J., Lee, S.J., Ashok, S., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/55488
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-554882023-10-25T23:12:53Z Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contact Chi, D.Z. Lee, R.T.P. Chua, S.J. Lee, S.J. Ashok, S. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.1923162 Journal of Applied Physics 97 11 - JAPIA 2014-06-17T02:43:39Z 2014-06-17T02:43:39Z 2005 Article Chi, D.Z., Lee, R.T.P., Chua, S.J., Lee, S.J., Ashok, S., Kwong, D.-L. (2005). Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contact. Journal of Applied Physics 97 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1923162 00218979 http://scholarbank.nus.edu.sg/handle/10635/55488 000229804700062 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.1923162
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Chi, D.Z. Lee, R.T.P. Chua, S.J. Lee, S.J. Ashok, S. Kwong, D.-L.
format	Article
author	Chi, D.Z. Lee, R.T.P. Chua, S.J. Lee, S.J. Ashok, S. Kwong, D.-L.
spellingShingle	Chi, D.Z. Lee, R.T.P. Chua, S.J. Lee, S.J. Ashok, S. Kwong, D.-L. Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contact
author_sort	Chi, D.Z.
title	Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contact
title_short	Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contact
title_full	Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contact
title_fullStr	Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contact
title_full_unstemmed	Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contact
title_sort	current-voltage characteristics of schottky barriers with barrier heights larger than the semiconductor band gap: the case of nigen- (001) ge contact
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/55488
_version_	1781412137562800128

Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contact

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