Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contact

• Main Authors: Chi, D.Z., Lee, R.T.P., Chua, S.J., Lee, S.J., Ashok, S., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/55488
• Institution: National University of Singapore

10.1063/1.1923162