Effective suppression of Fermi level pinning in polycrystalline-silicon/ high- k gate stack by using polycrystalline-silicon-germanium gate electrode

Effective suppression of Fermi level pinning in polycrystalline-silicon/ high- k gate stack by using polycrystalline-silicon-germanium gate electrode

10.1063/1.2363144

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Bibliographic Details
Main Authors: Yu, X., Zhu, C., Yu, M.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55767
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Institution: National University of Singapore
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Summary:10.1063/1.2363144

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