Effective suppression of Fermi level pinning in polycrystalline-silicon/ high- k gate stack by using polycrystalline-silicon-germanium gate electrode

10.1063/1.2363144

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Main Authors:	Yu, X., Zhu, C., Yu, M.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/55767
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-55767
record_format	dspace
spelling	sg-nus-scholar.10635-557672023-10-25T22:59:25Z Effective suppression of Fermi level pinning in polycrystalline-silicon/ high- k gate stack by using polycrystalline-silicon-germanium gate electrode Yu, X. Zhu, C. Yu, M. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.2363144 Applied Physics Letters 89 16 - APPLA 2014-06-17T02:46:53Z 2014-06-17T02:46:53Z 2006 Article Yu, X., Zhu, C., Yu, M. (2006). Effective suppression of Fermi level pinning in polycrystalline-silicon/ high- k gate stack by using polycrystalline-silicon-germanium gate electrode. Applied Physics Letters 89 (16) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2363144 00036951 http://scholarbank.nus.edu.sg/handle/10635/55767 000241405200115 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.2363144
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Yu, X. Zhu, C. Yu, M.
format	Article
author	Yu, X. Zhu, C. Yu, M.
spellingShingle	Yu, X. Zhu, C. Yu, M. Effective suppression of Fermi level pinning in polycrystalline-silicon/ high- k gate stack by using polycrystalline-silicon-germanium gate electrode
author_sort	Yu, X.
title	Effective suppression of Fermi level pinning in polycrystalline-silicon/ high- k gate stack by using polycrystalline-silicon-germanium gate electrode
title_short	Effective suppression of Fermi level pinning in polycrystalline-silicon/ high- k gate stack by using polycrystalline-silicon-germanium gate electrode
title_full	Effective suppression of Fermi level pinning in polycrystalline-silicon/ high- k gate stack by using polycrystalline-silicon-germanium gate electrode
title_fullStr	Effective suppression of Fermi level pinning in polycrystalline-silicon/ high- k gate stack by using polycrystalline-silicon-germanium gate electrode
title_full_unstemmed	Effective suppression of Fermi level pinning in polycrystalline-silicon/ high- k gate stack by using polycrystalline-silicon-germanium gate electrode
title_sort	effective suppression of fermi level pinning in polycrystalline-silicon/ high- k gate stack by using polycrystalline-silicon-germanium gate electrode
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/55767
_version_	1781412186626719744

Effective suppression of Fermi level pinning in polycrystalline-silicon/ high- k gate stack by using polycrystalline-silicon-germanium gate electrode

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