Electrostatics of ultimately thin-body tunneling FET Using graphene nanoribbon

Electrostatics of ultimately thin-body tunneling FET Using graphene nanoribbon

10.1109/LED.2010.2103372

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Bibliographic Details
Main Authors: Lam, K.-T., Yang, Y., Samudra, G.S., Yeo, Y.-C., Liang, G.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Electrostatics
graphene
tunneling transistors
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55856
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Institution: National University of Singapore
Description
Summary:10.1109/LED.2010.2103372

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