Fabrication of p-MOSFETs on germanium epitaxially grown on gallium arsenide substrate by chemical vapor deposition
10.1149/1.2811859
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
2014
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/55989 |
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| Institution: | National University of Singapore |
| Summary: | 10.1149/1.2811859 |
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