Fabrication of p-MOSFETs on germanium epitaxially grown on gallium arsenide substrate by chemical vapor deposition
10.1149/1.2811859
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sg-nus-scholar.10635-559892024-11-11T18:19:33Z Fabrication of p-MOSFETs on germanium epitaxially grown on gallium arsenide substrate by chemical vapor deposition Zhu, M. Chin, H.-C. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.2811859 Journal of the Electrochemical Society 155 2 H76-H79 JESOA 2014-06-17T02:49:26Z 2014-06-17T02:49:26Z 2008 Article Zhu, M., Chin, H.-C., Samudra, G.S., Yeo, Y.-C. (2008). Fabrication of p-MOSFETs on germanium epitaxially grown on gallium arsenide substrate by chemical vapor deposition. Journal of the Electrochemical Society 155 (2) : H76-H79. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2811859 00134651 http://scholarbank.nus.edu.sg/handle/10635/55989 000251906800060 Scopus |
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National University of Singapore |
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Asia |
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Singapore Singapore |
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| description |
10.1149/1.2811859 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Zhu, M. Chin, H.-C. Samudra, G.S. Yeo, Y.-C. |
| format |
Article |
| author |
Zhu, M. Chin, H.-C. Samudra, G.S. Yeo, Y.-C. |
| spellingShingle |
Zhu, M. Chin, H.-C. Samudra, G.S. Yeo, Y.-C. Fabrication of p-MOSFETs on germanium epitaxially grown on gallium arsenide substrate by chemical vapor deposition |
| author_sort |
Zhu, M. |
| title |
Fabrication of p-MOSFETs on germanium epitaxially grown on gallium arsenide substrate by chemical vapor deposition |
| title_short |
Fabrication of p-MOSFETs on germanium epitaxially grown on gallium arsenide substrate by chemical vapor deposition |
| title_full |
Fabrication of p-MOSFETs on germanium epitaxially grown on gallium arsenide substrate by chemical vapor deposition |
| title_fullStr |
Fabrication of p-MOSFETs on germanium epitaxially grown on gallium arsenide substrate by chemical vapor deposition |
| title_full_unstemmed |
Fabrication of p-MOSFETs on germanium epitaxially grown on gallium arsenide substrate by chemical vapor deposition |
| title_sort |
fabrication of p-mosfets on germanium epitaxially grown on gallium arsenide substrate by chemical vapor deposition |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/55989 |
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1821195149514899456 |