Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET
10.1109/16.902743
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sg-nus-scholar.10635-561142023-08-29T20:53:42Z Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET Cheng, Z.-Y. Ling, C.H. ELECTRICAL & COMPUTER ENGINEERING ELECTRICAL ENGINEERING 10.1109/16.902743 IEEE Transactions on Electron Devices 48 2 388-391 IETDA 2014-06-17T02:50:53Z 2014-06-17T02:50:53Z 2001-02 Article Cheng, Z.-Y., Ling, C.H. (2001-02). Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET. IEEE Transactions on Electron Devices 48 (2) : 388-391. ScholarBank@NUS Repository. https://doi.org/10.1109/16.902743 00189383 http://scholarbank.nus.edu.sg/handle/10635/56114 000167017400030 Scopus |
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10.1109/16.902743 |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Cheng, Z.-Y. Ling, C.H. |
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Cheng, Z.-Y. Ling, C.H. |
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Cheng, Z.-Y. Ling, C.H. Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET |
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Cheng, Z.-Y. |
title |
Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET |
title_short |
Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET |
title_full |
Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET |
title_fullStr |
Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET |
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Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET |
title_sort |
gate-channel capacitance characteristics in the fully-depleted soi mosfet |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/56114 |
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1775627178124247040 |