Generation-Recombination Noise in the Near Fully Depleted SIMOX SOI n-MOSFET - Physical Characteristics and Modeling

Generation-Recombination Noise in the Near Fully Depleted SIMOX SOI n-MOSFET - Physical Characteristics and Modeling

10.1109/TED.2003.819371

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Bibliographic Details
Main Authors: Ang, D.S., Lun, Z., Ling, C.H.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Generation-recombination (G-R) noise
Lorentzian
Low-frequency noise
Shot-noise
Silicon-on-insulator (SOI)
SIMOX
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82406
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82406

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